MTP50P03HDL |
RFQ for MTP50P03HDL Required Field |
 |
| Technical/Catalog Information | MTP50P03HDL |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 50A |
| Rds On (Max) @ Id, Vgs | 25 mOhm @ 25A, 5V |
| Input Capacitance (Ciss) @ Vds | 4900pF @ 25V |
| Power - Max | 125W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 100nC @ 5V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MTP50P03HDL MTP50P03HDL MTP50P03HDLOS ND MTP50P03HDLOSND MTP50P03HDLOS |
| Product | Manufacturers | Pack | D/C |
| MTP50P03HDL | - | TO-220 | 04+ |
Features |
| • Avalanche Energy Specified• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode• Diode is Characterized for Use in Bridge Circuits• IDSS and VDS(on) Specified at Elevated Temperature |
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
30 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
30 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
± 15 ± 20 |
Vdc Vpk |
| Drain Current - Continuous - Continuous @ 100°C - Single Pulse (tp 10 s) |
ID ID IDM |
50 31 150 |
Adc Apk |
| Total Power Dissipation Derate above 25°C |
PD |
125 1.0 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
| Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =25Vdc,VGS = 5.0Vdc, Vdc,Peak IL =50Apk, L = 1.0mH, RG = 25) |
EAS |
1250 |
mJ |
